advanced power dual n-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss 30v fast switching performance r ds(on) 9.2m two independent device i d 52a halogen free & rohs compliant description absolute maximum ratin g s symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 a i d @t a =25 continuous drain current 3 a i d @t a =70 continuous drain current 3 a i dm pulsed drain current 1 a p d @t a =25 total power dissipation w t stg storage temperature range t j operating junction temperature range symbol value unit rthj-c maximum thermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 3 42 /w data and specifications subject to change without notice parameter rating 201303041 1 continuous drain current thermal data parameter 11 + 20 AP6902AGH-HF 30 halogen-free product -55 to 150 -55 to 150 52 13.8 50 3 g2 d2 s2 g1 d1 s1 advanced power mosfets from apec provide the designe r with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 sdpak tm g1 s2 g2 d1 (tab1) d2 (tab2) sdpak tm used apec innovated package and provides two independent device that is suitable and optimum for dc/dc power application.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 9.2 m ? v gs =4.5v, i d =8a - - 13.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =12a - 26 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =12a - 15 24 nc q gs gate-source charge v ds =24v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9.5 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =12a - 41 - ns t d(off) turn-off delay time r g =3.3 -24- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =25v - 210 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf r g gate resistance f=1.0mhz - 2.4 4.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.5a, v gs =0v - - 1.2 v t rr reverse recovery time is=10a, v gs =0 v , - 23 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.rthja is determined with the device, mounted on 2oz fr4 board t Q 10s. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6902AGH-HF
ap6902agh-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 7 8 9 10 11 12 246810 v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =8a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
a p6902agh-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =24v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =75 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 10 20 30 40 50 60 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 4 8 12 16 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) t j = -40 o c operation in this area limited by r ds(on)
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